Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions
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TAVRINA, T., ROGACHEVA, E., PINEGIN, V.. Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions. In: Moldavian Journal of the Physical Sciences, 2005, nr. 4(4), pp. 430-434. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 4(4) / 2005 / ISSN 1810-648X /ISSNe 2537-6365

Structural, thermoelectric and galvanomagnetic properties of pbte-bite semiconductor solid solutions

Pag. 430-434

Tavrina T., Rogacheva E., Pinegin V.
 
National Technical University “Kharkov Polytechnic Institute”
 
 
Disponibil în IBN: 19 noiembrie 2013


Rezumat

The concentration dependences of unit cell parameter a, width of diffraction reflections B, electrical conductivity s, the Seebeck coefficient S, the Hall coefficient RH, charge carrier mobility m, and thermoelectric power factor P = S2 ×s for the Pb1-xBixTe (x = 0¸0.05) alloys were obtained. A non-monotonic character of the concentration dependences of properties was detected and attributed to a change in the defect formation in the PbTe-BiTe system under increasing BiTe concentration.