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 SM ISO690:2012RAEVSKY, Simion, DAVÎDOV, V., ZHILYAEV, Y., GORCEAC, Leonid, BOTNARIUC, Vasile. Thin AIN films growth on Si (III) by hydride vapor phase epitaxy. In: Moldavian Journal of the Physical Sciences, 2008, nr. 4(7), pp. 476-480. ISSN 1810-648X. |
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| Moldavian Journal of the Physical Sciences | ||||||
| Numărul 4(7) / 2008 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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| Pag. 476-480 | ||||||
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Thin AlN layers have been grown on Si (111) by hydride vapor phase epitaxy (HVPE)
method in a horizontal quartz reactor. The surface of layers has been studied by scanning
lectron microscopy and by the Raman spectroscopy method and found to have the structured
morphology. It has been determined that the layers have high specific electrical resistance and
are strained in the plane of the substrate. |
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