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SM ISO690:2012 LEBOURHIS, E., PATRIARCHE, G.. Nanoindentation response of semiconductors. In: Moldavian Journal of the Physical Sciences, 2008, nr. 4(7), pp. 456-465. ISSN 1810-648X. |
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Moldavian Journal of the Physical Sciences | ||||||
Numărul 4(7) / 2008 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
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Pag. 456-465 | ||||||
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The paper reviews the nanoindentation behaviour of semiconductors under concentrated
load. We consider first, fundamental aspects regarding the mechanical resistance to contact
loading of semiconductor single crystals (indentation strain, hardness-yield stress relationship). Then, the paper summarizes recent studies regarding nanoindentation structure and
geometrical size effect.
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