Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
47 0 |
SM ISO690:2012 TIGINYANU, Ion. Ion-implantation-assisted electrochemical nanostructuring of GaP for optoelectronic applications. In: Электронная обработка материалов, 2000, vol. 36, pp. 16-24. ISSN 0013-5739. |
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Электронная обработка материалов | ||||||
Volumul 36 / 2000 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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Pag. 16-24 | ||||||
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High-quality nanoporous layers and free-standing membranes of gallium phosphide have been fabricated by using MeV-ion-implantation assisted electrochemical etching. They were found to exhibit ultraviolet luminescence, Frohlich-type surface-related vibrations and enhanced nonlinear optical response. The obtained results are discussed in connection with various possible applications of nanoporous structures. |
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Cuvinte-cheie electrochemistry, etching, ion implantation, Nanostructured materials, Optoelectronic devices, Phosphorus compounds, porosity |
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