Ion-implantation-assisted electrochemical nanostructuring of GaP for optoelectronic applications
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
47 0
SM ISO690:2012
TIGINYANU, Ion. Ion-implantation-assisted electrochemical nanostructuring of GaP for optoelectronic applications. In: Электронная обработка материалов, 2000, vol. 36, pp. 16-24. ISSN 0013-5739.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Электронная обработка материалов
Volumul 36 / 2000 / ISSN 0013-5739 /ISSNe 2345-1718

Ion-implantation-assisted electrochemical nanostructuring of GaP for optoelectronic applications


Pag. 16-24

Tiginyanu Ion
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 8 februarie 2024


Rezumat

High-quality nanoporous layers and free-standing membranes of gallium phosphide have been fabricated by using MeV-ion-implantation assisted electrochemical etching. They were found to exhibit ultraviolet luminescence, Frohlich-type surface-related vibrations and enhanced nonlinear optical response. The obtained results are discussed in connection with various possible applications of nanoporous structures.

Cuvinte-cheie
electrochemistry, etching, ion implantation, Nanostructured materials, Optoelectronic devices, Phosphorus compounds, porosity