| Conţinutul numărului revistei |
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 SM ISO690:2012ИСАЕВ, М., НОРОВ, Ш., МАЖИДОВ, А.. Исследование гальваномагнитных свойств приповерхностного слоя диффузионно-легированного кремния. In: Электронная обработка материалов, 2006, nr. 6(42), pp. 80-83. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 6(42) / 2006 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 80-83 | ||||||
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Compensated silicon Si<B,Mn>, Si<B,Co>, Si<B,Cr> with different compensation degrel was received using diffusion doping with Mn, Co and Cr. Surface and volume conductivity was investigated so as concentration and charge current mobility, their distribution profile. It was stated that irrespective of the original silicon conductivity type the conductivity of presurface layer with definite thick was hole-type with carriers concentration ^ 1021cm-3 . Contradiction between hole properties Mn, Co, Cr and the hole character of presurface layer conductivity, so as between value of solubility Mn, Co, Cr in silicon and concentration |
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