Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films
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IASENIUC, Oxana, ANDRIESH, Andrei, ABASHKIN, Vladimir. Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films. In: Moldavian Journal of the Physical Sciences, 2010, nr. 3-4(9), pp. 339-344. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 3-4(9) / 2010 / ISSN 1810-648X /ISSNe 2537-6365

Optical properties of chalcogenide (As2S1.5Se1.5)0.99:Sn0.01 thin films


Pag. 339-344

Iaseniuc Oxana, Andriesh Andrei, Abashkin Vladimir
 
Institute of Applied Physics, Academy of Sciences of Moldova
 
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

In this work, we carried out measurements of optical constants (refractive index n, ab- sorption coefficient α, extinction coefficient k, optical band gap E ) from transmission spectrum at strong and medium absorption regions on a thin film arsenic As-S-Se-Sn system prepared by a conventional melt-quenching technique. Photostructural transformations in amorphous films of (As S Se ) :Sn (x = 0.01 at %) were investigated. The value of the photoinduced changing refractive index and band gap were obtained Δn = 0.10 (±0.02); ΔE = 0.07 (±0.01) eV. The refractive index and optical band gap before and after light exposure at λ = 700 nm is n = 2.52÷2.62 (±0.02) and E = 2.09÷2.16 (±0.01) eV.