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SM ISO690:2012 TIVANOV, Mikhail, ZARETSKAYA, E., GREMENOK, V., IVANOV, V., MUDRIY, A., IVANIUKOVICH, A., ZALESSKI, V., ZYKOTINSKI, S., BENTE, K.. Optical properties of Cu(In, Ga)(S, Se)2 films for solar cells. In: Moldavian Journal of the Physical Sciences, 2007, nr. 1(6), pp. 117-122. ISSN 1810-648X. |
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Moldavian Journal of the Physical Sciences | |
Numărul 1(6) / 2007 / ISSN 1810-648X /ISSNe 2537-6365 | |
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Pag. 117-122 | |
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Rezumat | |
In this paper, we present structural and optical properties of single-phase
Cu(In, Ga)(S, Se)2 alloys, which have been prepared using a novel selenization/sulfurization
growth process to react copper-indium-gallium alloy films. The grown scheme differs critically from standard two-step grown processes and was carried out without toxic H2S and
H2Se gases. The calculated band gap values for layers with varying sulfur content (i.e.
S/(S Se) = 0.16 and 0.19), determined from optical transmission and reflectance measurements, were found to be 1.17 and 1.23 eV respectively. The low temperature PL measurements also confirmed the shift in the band gap of the CIGSS absorber films with sulfur
incorporation.
In summary, this reaction process produced single-phase CIGSS thin films with controlled sulfur amount suitable for photovoltaic application. |
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